- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,574
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 5.7 A | 690 mOhms | Enhancement | |||||
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1,288
In-stock
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IXYS | MOSFET TenchP Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | - 4 V | 180 nC | Enhancement | |||
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6,201
In-stock
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Fairchild Semiconductor | MOSFET -200V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 670 mA | 2.7 Ohms | Enhancement | |||||
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3,912
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | |||||
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1,430
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 7.3 A | 690 mOhms | Enhancement | |||||
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1,210
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 11.5 A | 470 mOhms | Enhancement | |||||
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GET PRICE |
47,330
In-stock
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Diodes Incorporated | MOSFET 200V P-CHANNEL | 20 V | SMD/SMT | SOT-23F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 137 mA | 28 Ohms | Enhancement | ||||
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3,227
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 225 mA | 12 Ohms | Enhancement | |||||
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4,129
In-stock
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Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 35 mA | 80 Ohms | Enhancement | |||||
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611
In-stock
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Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | |||||
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40
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | Enhancement | |||||
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1,655
In-stock
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Diodes Incorporated | MOSFET 200V 200mA P-Channel Enhancement MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET P-Ch 200 Volt 0.122A | 20 V | SMD/SMT | SOT-23-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 122 mA | 28 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 24 Amps 200V 11 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | Enhancement | |||||
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4,000
In-stock
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Fairchild Semiconductor | MOSFET 250V 0.11OHM 25.5A MOSFET | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 670 mA | 2.7 Ohms |
