- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,498
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel 2.5V PowerTrench MOSFET | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 43 mOhms | Enhancement | PowerTrench | |||||
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7,336
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 48 mOhms | Enhancement | PowerTrench | |||||
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2,140
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 53 mOhms | Enhancement | PowerTrench | |||||
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4,552
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 25 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 4.5 A | 50 mOhms | - 2 V | 10.5 nC | Enhancement | |||||
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2,891
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 155 mOhms | - 1.3 V | 8.6 nC | Enhancement | ||||
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2,340
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 14.4 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.5 A | 98 mOhms | - 3 V | 9.5 nC | Enhancement | ||||
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4,465
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 56 mOhms | |||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 25 nC | Enhancement | ||||
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7,575
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 35 mOhms | |||||||
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5,820
In-stock
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onsemi | MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 85 mOhms | 7.3 nC | |||||||
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508
In-stock
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Texas instruments | MOSFET Dual P-Channel Nex FET Power MOSFET | 8 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4.5 A | 39 mOhms | NexFET |
