- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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57,460
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 135 mOhms | Enhancement | ||||||
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16,286
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 12 A | 17 mOhms | - 0.4 V to - 1 V | 75 nC | Enhancement | ||||
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2,877
In-stock
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Fairchild Semiconductor | MOSFET Single P-Channel Power Trench Mosfet | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 13 mOhms | - 0.6 V | PowerTrench | |||||
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2,170
In-stock
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STMicroelectronics | MOSFET | +/- 18 V | SMD/SMT | TO-252-3 | - | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.027 Ohms | - 1 V | 29 nC | Enhancement | ||||
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1,760
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | |||||
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414
In-stock
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onsemi | MOSFET PCH -60V -12A TP-FA(DPAK) | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | ||||
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1,910
In-stock
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Diodes Incorporated | MOSFET P-Channel 2.5W | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 14 mOhms | Enhancement | ||||||
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2,879
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF | 6 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 61 mOhms | - 0.3 V to - 1 V | 37.6 nC | |||||
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7,907
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -12A 11.9mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 10 mOhms | - 1.8 V | 18 nC | Enhancement | ||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V PowerPAK SC-70 | +/- 20 V | SMD/SMT | PowerPAK-SC70-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.021 Ohms | - 3 V | 32 nC | Enhancement |
