- Package / Case :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,220
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 P-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 26 mOhms | Enhancement | |||||
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1,627
In-stock
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Diodes Incorporated | MOSFET 30V P Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 45 mOhms | Enhancement | |||||
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3,797
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 20 mOhms | - 2.5 V | 35.4 nC | Enhancement | |||
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2,528
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.5 A | 22 mOhms | 700 mV | 5.8 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.5 A | 30 mOhms | Enhancement |
