- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,755
In-stock
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Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 2.5V | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 120 mOhms | Enhancement | PowerTrench | ||||||
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3,988
In-stock
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Fairchild Semiconductor | MOSFET MLP 2X2 DUAL INTEGRATED PCH PO | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | Enhancement | PowerTrench | ||||||
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32,980
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 120 mOhms | Enhancement | ||||||
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1,337
In-stock
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Fairchild Semiconductor | MOSFET MLP 2X2 DUAL PCH POWER TRENCH | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.2 A | 120 mOhms | Enhancement | PowerTrench | ||||||
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210
In-stock
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IXYS | MOSFET -100V -18A | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 2.5 V to - 4.5 V | 39 nC | Enhancement | |||||
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1,636
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs -14A 1.6W | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.6 A | 120 mOhms | - 3 V | 14 nC | Enhancement | |||||
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13,559
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 120 mOhms | - 950 mV | 3.7 nC | Enhancement | |||||
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161,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement | |||||
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15,000
In-stock
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onsemi | MOSFET -20V -4.1A Dual P-Channel | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4.1 A | 120 mOhms | Enhancement | |||||||
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2,016
In-stock
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Fairchild Semiconductor | MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | Enhancement |