- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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13,004
In-stock
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onsemi | MOSFET PFET 20V 3.2A 85MO | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 70 mOhms | 7.5 nC | |||||
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7,100
In-stock
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Diodes Incorporated | MOSFET 20V 3.8A DUAL P-CHAN | 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.8 A | 70 mOhms | Enhancement | |||||
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2,600
In-stock
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Infineon Technologies | MOSFET 1 P-CH -40V HEXFET 41mOhms 53nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 6.2 A | 70 mOhms | 53 nC | Enhancement | ||||
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573
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | - 1 V | 59 nC | Enhancement | |||
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7,570
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -12V 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2 A | 70 mOhms | - 350 mV | 5.8 nC | Enhancement | |||
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3,840
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A, - 5.6 A | 70 mOhms | - 3 V | 11 nC | Enhancement | |||
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446
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.7 A | 70 mOhms | Enhancement | |||||
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3,889
In-stock
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Micrel / Microchip Technology | MOSFET | 1.8 V | SMD/SMT | SC-70-6 | - 40 C | + 150 C | Reel | Si | P-Channel | - 6 V | - 2 A | 70 mOhms | - 0.5 V | ||||||
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51,290
In-stock
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Micrel / Microchip Technology | MOSFET | 1.8 V | SMD/SMT | SC-70-6 | - 40 C | + 150 C | Reel | Si | P-Channel | - 6 V | - 2 A | 70 mOhms | - 0.5 V | ||||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enhancement Mode | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 70 mOhms | - 3 V | 8.2 nC | Enhancement | |||
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15,000
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 70 mOhms | ||||||
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VIEW | Nexperia | MOSFET PMN70XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.1 A | 70 mOhms | - 1 V | 5.2 nC | Enhancement | ||||
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1,257
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 70 mOhms | ||||||
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3,000
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 70 mOhms |
