- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
306,500
In-stock
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Nexperia | MOSFET PMV50EPEA/TO-236AB/REEL 7 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.2 A | 35 mOhms | - 3 V | 19.2 nC | Enhancement | |||
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14,398
In-stock
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Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 2.5V | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.5 A | 35 mOhms | Enhancement | PowerTrench | |||||
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | |||||
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1,174
In-stock
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Fairchild Semiconductor | MOSFET Single P-Ch FET Enhancement Mode | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 35 mOhms | Enhancement | ||||||
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5,334
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl HDMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.9 A | 35 mOhms | Enhancement | ||||||
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14,820
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A | 25 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.3 A | 35 mOhms | - 1 V | 11.8 nC | Enhancement | ||||
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9,212
In-stock
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Fairchild Semiconductor | MOSFET -30V P-Ch PowerTrench MOSFET | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 35 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 12V 5.5A | 8 V | SMD/SMT | VS6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.5 A | 35 mOhms | Enhancement | ||||||
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7,575
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 35 mOhms |
