- Vgs - Gate-Source Voltage :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
34 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,890
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | Si | P-Channel | - 60 V | - 4 A | 77 mOhms | - 1.2 V | 14 nC | Enhancement | ||||||
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6,700
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.7 A | 110 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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1,904
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement | OptiMOS | |||
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4,882
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | ||||
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2,074
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.9 A | 15 mOhms | - 1.2 V | - 39 nC | Enhancement | OptiMOS | |||
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9,600
In-stock
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Diodes Incorporated | MOSFET P-CH ENHANCEMENT MODE MOSFET | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | |||||
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14,998
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | ||||
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13,771
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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3,035
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||||
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11,038
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | ||||
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3,463
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-363-6 | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 131 mOhms | - 1.2 V | - 5.7 nC | Enhancement | ||||
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2,044
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | ||||
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3,885
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||||
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4,227
In-stock
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Diodes Incorporated | MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA | +/- 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 50 V | - 200 mA | 6 Ohms | - 1.2 V | 580 pC | Enhancement | |||||
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4,140
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||||
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2,478
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.14 A | 495 mOhms | - 1.2 V | 1.5 nC | Enhancement | ||||
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5,398
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH -50V 6Ohm FET -4V Vgs -200mA | 8 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 160 mA | 6 Ohms | - 1.2 V | 0.58 nC | Enhancement | ||||
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3,924
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-363-6 | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 131 mOhms | - 1.2 V | - 5.7 nC | Enhancement | ||||
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46
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Channel 1.5V Specfied PowerTrench | +/- 8 V | SMD/SMT | WLCSP-4 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 143 mOhms | - 1.2 V | 15 nC | PowerTrench | |||||
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161,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 120 mOhms | - 1.2 V | 5.5 nC | Enhancement | ||||
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3,628
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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80
In-stock
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onsemi | MOSFET 20V 4.2A 60MOHM PFET | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 55 mOhms | - 1.2 V | 10 nC | Enhancement | ||||
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16,905
In-stock
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Texas instruments | MOSFET -20V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 ... | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 840 mOhms | - 1.2 V | 0.7 nC | Enhancement | PicoStar | |||
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4,330
In-stock
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Toshiba | MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm | 12 V | SMD/SMT | WCSP6C-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5 A | 26 mOhms | - 1.2 V | 9.8 nC | |||||
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5,634
In-stock
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Texas instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | ||||
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2,121
In-stock
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Toshiba | MOSFET Vds=-30V Id=-2A 3Pin | +/- 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 225 mOhms | - 1.2 V | Enhancement | |||||
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906
In-stock
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Texas instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | FemtoFET | |||
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12,000
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A, - 2.3 A | 57 mOhms, 57 mOhms | - 1.2 V | 1.6 nC, 1.6 nC | Enhancement | ||||
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5,819
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K | 12 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.2 A | 25 mOhms | - 1.2 V | 113 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement |
