- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,246
In-stock
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Fairchild Semiconductor | MOSFET P-CH/400V/2.7A/3.1OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 2.7 A | 3.1 Ohms | - 5 V | 18 nC | QFET | ||||
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152,000
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | |||||
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1,760
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -12A 11.9mOhm | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 16.1 mOhms | - 1.8 V | 18 nC | |||||
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1,613
In-stock
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Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement | ||||
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7,907
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -12A 11.9mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 10 mOhms | - 1.8 V | 18 nC | Enhancement | ||||
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2,931
In-stock
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Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 480 mOhms | - 4 V | 18 nC | Enhancement |
