- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,559
In-stock
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STMicroelectronics | MOSFET N-Ch 450 Volt 0.4 A | 30 V | SMD/SMT | SOIC-8 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 450 V | 400 mA | 4.1 Ohms | 7 nC | Enhancement | ||||
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3,609
In-stock
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Diodes Incorporated | MOSFET 450V 140mA N-Channel Enhancement MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 140 mA | 50 Ohms | 1 V | Enhancement | ||||
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1,594
In-stock
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STMicroelectronics | MOSFET N-Ch 450V 3.2 ohm 1.8 A SuperMESH3 | 3 V | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 600 mA | 3.8 Ohms | 4.5 V | 6 nC | |||||
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150
In-stock
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Diodes Incorporated | MOSFET N-Chnl 450V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 140 mA | 50 Ohms | Enhancement | |||||
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71
In-stock
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Toshiba | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029 | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 450 V | 11 A | 500 mOhms | 20 nC |
