- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,462
In-stock
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onsemi | MOSFET T1 60V PCH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 183 mOhms | - 2.5 V | 4.3 nC | Enhancement | |||
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GET PRICE |
439,000
In-stock
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Diodes Incorporated | MOSFET 60V P-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.1 A | 600 mOhms | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 60 V | - 1.1 A | 400 mOhms | - 3 V | 2.9 nC | Enhancement |
