- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,579
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||||
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658
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | ||||||
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599
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | ||||
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1,508
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | |||||
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786
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFE... | 30 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 6 A | 1.25 Ohms | 3 V | 13 nC | Enhancement |