- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,603
In-stock
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Fairchild Semiconductor | MOSFET PT8 30/12V Dual Nch Power Trench MOSFET | 12 V | SMD/SMT | PQFN-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 66 A | 3.4 mOhms | - 4 mV/C | 25 nC | PowerTrench Power Clip | ||||
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23
In-stock
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IXYS | MOSFET 70 Amps 600V | 20 V | SMD/SMT | TO-247-SMD-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 66 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | ||||
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1,490
In-stock
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onsemi | MOSFET NFET U8FL 25V 66A 4.8MOHM | 20 V | SMD/SMT | WDFN-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 66 A | 3.8 mOhms | 1.1 V | 12.4 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 300V 0.046 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 66 A | 46 mOhms | Enhancement | HyperFET |
