- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,054
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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2,927
In-stock
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Fairchild Semiconductor | MOSFET PowerStage 25V Dual N-Channel MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 34 A | 5 mOhms | Enhancement | PowerTrench | |||||||
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2,845
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 34 A | 2.7 mOhms | 61 nC | Enhancement | SyncFET | ||||||
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4,992
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | |||||
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555
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 88 mOhms | 3 V | 57 nC | Enhancement | |||||
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922
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 4 V | 56 nC | Enhancement | |||||
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2,329
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 34 Amps 500V 0.12 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 34 A | 154 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 34 Amps 900V 0.22 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 34 A | 220 mOhms | Enhancement | HyperFET | ||||||
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1,503
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 16.4 mOhms | 2 V | 13 nC | Enhancement |