- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,793
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 2.5 mOhms, 900 uOhms | 1.2 V, 1.2 V | 12 nC, 37 nC | Enhancement | ||||
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490
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.7 mOhms, 1.3 mOhms | 1.6 V, 1.6 V | 3 nC, 8.8 nC | OptiMOS | ||||
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49
In-stock
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Infineon Technologies | MOSFET TRANSITIONAL MOSFETS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET LV POWER MOS | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 3.5 mOhms, 900 uOhms | 1 V, 1 V | 6.6 nC, 30.6 nC | Enhancement | OptiMOS |
