- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,779
In-stock
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Diodes Incorporated | MOSFET Transistor Array | +/- 6 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel, PNP | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | |||
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1,432
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | |||
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GET PRICE |
26,988
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||
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16,950
In-stock
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onsemi | MOSFET 20V/-8V 0.63A/-.775A Complementary | 12 V, 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 8 V | 630 mA | 375 mOhms, 300 mOhms | 1.3 nC, 2.2 nC | Enhancement |
