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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BSS225 H6327
Per Unit
$0.510
RFQ
25,000
In-stock
Infineon Technologies MOSFET N-Ch 600V 90mA SOT-89-3 20 V SMD/SMT SOT-89-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 90 mA 28 Ohms 1.3 V 5.8 nC Enhancement
BSS225H6327FTSA1
Per Unit
$0.510
RFQ
25,000
In-stock
Infineon Technologies MOSFET N-Ch 600V 90mA SOT-89-3 20 V SMD/SMT SOT-89-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 90 mA 28 Ohms 1.3 V 5.8 nC Enhancement
BSS169 H6906
1+
$0.640
10+
$0.529
100+
$0.341
1000+
$0.273
3000+
$0.231
RFQ
2,449
In-stock
Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 90 mA 12 Ohms   2.1 nC  
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