- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,533
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6 A | 32 mOhms | Enhancement | PowerTrench | |||||
|
|
2,237
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||||
|
|
1,989
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 43 mOhms | 13 nC | ||||||
|
|
VIEW | Toshiba | MOSFET MOSFET P-Ch 30V 6A | 20 V | SMD/SMT | VS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 28 mOhms | Enhancement |
