- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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31,187
In-stock
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STMicroelectronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | ||||||
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4,542
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.8 A | 350 mOhms | Enhancement | |||||||
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1,202
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.8 A | 1.95 Ohms | Enhancement | |||||||
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2,313
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | |||||
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844
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 1 V | 13.2 nC | Enhancement | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | |||||
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192,000
In-stock
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onsemi | MOSFET NFET 3X3 20V 3.0A 9MOHM | 20 V | SMD/SMT | DFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.8 A | 9 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 5.8A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 5.8 A | 725 mOhms | 4 V | 20 nC | CoolMOS | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.8 A | 890 mOhms | 2.5 V | 11 nC | Enhancement |