- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,689
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9.4 A | 14 mOhms | Enhancement | PowerTrench | |||||
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1,538
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL MOSFET | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9.4 A | 14 mOhms | 16 nC | PowerTrench | |||||
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2,429
In-stock
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Fairchild Semiconductor | MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05 | 1.5 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.4 A | 32.3 mOhms | 600 mV | 17.5 nC | PowerTrench | ||||
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127
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9.4 A | 14 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9.4 A | 15.9 mOhms | Enhancement | OptiMOS | |||||
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359
In-stock
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Nexperia | MOSFET PMPB20UN/SOT1220/REEL7 | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.4 A | 19 mOhms | 0.7 V | 4.7 nC | Enhancement |
