- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
9,000
In-stock
|
onsemi | MOSFET PFET 2X2 20V 4.1A 106MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.3 A | 106 mOhms | Enhancement | |||||||
|
1,723
In-stock
|
Fairchild Semiconductor | MOSFET -30V Dual P-Channel PowerTrench MOSFET | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.3 A | 87 mOhms | Enhancement | PowerTrench | ||||||
|
9,248
In-stock
|
onsemi | MOSFET 12V 3.3A P-Channel | 12 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 133 mOhms | Enhancement | |||||||
|
4,635
In-stock
|
onsemi | MOSFET PFET 2X2 20V 4.1A 106MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 100 mOhms | Enhancement | |||||||
|
2,774
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 57 mOhms | - 1.3 V | 15.9 nC | Enhancement | |||||
|
4,916
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||||
|
5,327
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||||
|
2,388
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A | - 6 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 65 mOhms | - 1 V | 5 nC | Enhancement | |||||
|
1,012
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 85 mOhms | - 1.5 V | 7.8 nC | Enhancement | |||||
|
1,560
In-stock
|
Texas instruments | MOSFET 12V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 t... | - 6 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 29 mOhms | - 950 mV | 4.2 nC | Enhancement | PicoStar | ||||
|
500
In-stock
|
Texas instruments | MOSFET 12V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 t... | - 6 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 29 mOhms | - 950 mV | 4.2 nC | Enhancement | PicoStar | ||||
|
3,000
In-stock
|
onsemi | MOSFET -12V -3.3A P-Channel | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 75 mOhms | Enhancement | |||||||
|
VIEW | onsemi | MOSFET 12V 3.3A P-Channel | 12 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 133 mOhms | Enhancement | |||||||
|
2,450
In-stock
|
Fairchild Semiconductor | MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 87 mOhms | - 1.9 V | 7.2 nC |