- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,445
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Ch PowerTrench Integrated | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.2 A | 150 mOhms | Enhancement | PowerTrench | |||||
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5,936
In-stock
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Fairchild Semiconductor | MOSFET Dual P-Ch 2.5V Spec Power Trench | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.2 A | 125 mOhms | Enhancement | PowerTrench | |||||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | ||||
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1,337
In-stock
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Fairchild Semiconductor | MOSFET MLP 2X2 DUAL PCH POWER TRENCH | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.2 A | 120 mOhms | Enhancement | PowerTrench | |||||
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754
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Pch PowerTrench Mosfet | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 255 mOhms | - 3 V | 16 nC | Enhancement | PowerTrench | |||
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160,400
In-stock
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Texas instruments | MOSFET 12V P-channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 44 mOhms | - 900 mV | 3.8 nC | Enhancement | NexFET | |||
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1,314
In-stock
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Texas instruments | MOSFET 12V PCH NexFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 123 mOhms | - 0.6 V | 2.9 nC | NexFET |
