MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	DMN3018SSS-13	1+ $0.380 10+ $0.288 100+ $0.156 1000+ $0.117 2500+ $0.101		PDF RFQ	2,861 In-stock	Diodes Incorporated	MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K	25 V	SMD/SMT	SO-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	9.7 A	35 mOhms	2.1 V	6 nC	Enhancement
	DMG4468LK3-13	1+ $0.550 10+ $0.452 100+ $0.276 1000+ $0.213 2500+ $0.182		PDF RFQ	965 In-stock	Diodes Incorporated	MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	9.7 A	11 mOhms	1.05 V	18.85 nC	Enhancement
	TK10P60W,RVQ	1+ $2.760 10+ $2.220 100+ $1.780 250+ $1.690 2000+ $1.190		PDF RFQ	1,201 In-stock	Toshiba	MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC	30 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	9.7 A	380 mOhms	2.7 V to 3.7 V	20 nC	Enhancement

DMN3018SSS-13

DMN3018SSS-13

Diodes Incorporated

MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K

Stock : 2,861

1+: $0.380

10+: $0.288

100+: $0.156

1000+: $0.117

2500+: $0.101

DMG4468LK3-13

DMG4468LK3-13

Diodes Incorporated

MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A

Stock : 965

1+: $0.550

10+: $0.452

100+: $0.276

1000+: $0.213

2500+: $0.182

TK10P60W,RVQ

TK10P60W,RVQ

Toshiba

MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC

Stock : 1,201

1+: $2.760

10+: $2.220

100+: $1.780

250+: $1.690

2000+: $1.190

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