- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,800
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 17.5 mOhms | 22 nC | Enhancement | Directfet | ||||
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2,222
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 14.4 mOhms | 4.9 V | 28 nC | |||||
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2,484
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | ||||
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513
In-stock
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Fairchild Semiconductor | MOSFET 100V NCHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 24 mOhms | PowerTrench | |||||||
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2,659
In-stock
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Infineon Technologies | MOSFET 30V 8.3A 17.5mOhm 2.5V drive capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 17.5 mOhms | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 8.3A VSON-5 | 30 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 650 V | 8.3 A | 460 mOhms | 4 V | 31.5 nC | CoolMOS | ||||
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2,630
In-stock
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IR / Infineon | MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 10.5 nC | Enhancement | |||||
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2,270
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | Enhancement |
