- Manufacture :
- Minimum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
206,500
In-stock
|
onsemi | MOSFET 20V 540mA Dual N-Channel w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 700 mOhms | Enhancement | ||
|
|
11,205
In-stock
|
Diodes Incorporated | MOSFET 20V 540mA | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||
|
|
20,000
In-stock
|
onsemi | MOSFET 20V 540mA/-430mA Complementary w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement |
