- Vgs - Gate-Source Voltage :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1.7 mOhms (1)
- 105 mOhms (1)
- 12.2 mOhms (1)
- 13 mOhms (2)
- 14.1 mOhms (1)
- 16 mOhms (2)
- 16.6 mOhms (1)
- 2.8 mOhms (1)
- 3.3 mOhms (1)
- 3.7 mOhms, 700 uOhms (1)
- 36.3 mOhms (1)
- 4.1 mOhms (1)
- 40 mOhms (1)
- 45 mOhms (1)
- 5.3 mOhms (1)
- 5.4 mOhms (2)
- 5.8 mOhms (1)
- 58 mOhms (1)
- 6.2 mOhms (2)
- 60 mOhms (1)
- 65 mOhms (1)
- 7.8 mOhms (3)
- 8.5 mOhms (1)
- 9 mOhms (2)
- Tradename :
31 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
50,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
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67,313
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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4,703
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | ||||
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8,888
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | ||||
|
GET PRICE |
34,976
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | |||
|
868
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel PowerTrench MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 50 A | 36.3 mOhms | Enhancement | PowerTrench | ||||||
|
50,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
|
5,010
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 30 nC | Enhancement | OptiMOS | ||||
|
6,488
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | ||||
|
1,633
In-stock
|
onsemi | MOSFET NFET SO8FL 100V 15A 14MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 12.2 mOhms | 2 V | 20 nC | Enhancement | |||||
|
88
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | ||||
|
1,944
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
|
403
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 8.5 mOhms | Enhancement | PowerTrench | ||||||
|
70
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | ||||
|
15
In-stock
|
IXYS | MOSFET 50 Amps 250V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | |||||
|
18
In-stock
|
IXYS | MOSFET 50 Amps 200V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 45 mOhms | Enhancement | |||||||
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8,730
In-stock
|
Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | ||||
|
7,422
In-stock
|
Texas instruments | MOSFET 60V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 3.3 mOhms | 1.5 V | 41 nC | Enhancement | NexFET | ||||
|
GET PRICE |
12,419
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.8 mOhms | 1.8 V | 36 nC | NexFET | ||||
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48,920
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | ||||
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6,610
In-stock
|
Texas instruments | MOSFET 40V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 1.7 mOhms | 1.4 V | 150 nC | Enhancement | NexFET | ||||
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2,237
In-stock
|
Texas instruments | MOSFET Synchrnus Buck NxFT Pwr Block | - 8 V to + 10 V, - 8 V to + 10 V | SMD/SMT | LSON-CLIP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A | 3.7 mOhms, 700 uOhms | 1 V, 750 mV | 12.6 nC, 30 nC | Enhancement | NexFET | ||||
|
GET PRICE |
14,850
In-stock
|
Texas instruments | MOSFET 100V, NCh NexFET | 2.8 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 14.1 mOhms | 2.8 V | 17 nC | Enhancement | ||||
|
877
In-stock
|
Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | ||||
|
37,800
In-stock
|
Texas instruments | MOSFET 40V,N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 5.3 mOhms | 1.5 V | 19 nC | Enhancement | |||||
|
530
In-stock
|
Texas instruments | MOSFET 60V,N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.5 V | 22 nC | Enhancement | |||||
|
250
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 4.1 mOhms | 1.5 V | 38 nC | Enhancement | NexFET | ||||
|
750
In-stock
|
Texas instruments | MOSFET 100V N-Channel NexFET" Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 50 Amps 200V 0.04 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 50 Amps 300V 0.065 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 65 mOhms | Enhancement |