- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
137,170
In-stock
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IR / Infineon | MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 250 mOhms | 0.7 V | 2.6 nC | |||||
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9,795
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.2 A | 250 mOhms | Enhancement | |||||||
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13,795
In-stock
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Fairchild Semiconductor | MOSFET Dual PT4 N 20/8V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 1.2 A | 321 mOhms | PowerTrench | ||||||||
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7,713
In-stock
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Fairchild Semiconductor | MOSFET NCH DUAL COOL POWERTRENCH MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 1.2 A | 350 mOhms | PowerTrench | |||||||
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3,252
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.1A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||||
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3,780
In-stock
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onsemi | MOSFET NCH 10V DRIVE SERIES | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 1.2 A | 2.4 Ohms | 3.5 V | 4.2 nC | ||||||
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930
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 1.1A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||||
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1,648
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||||
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1,244
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 500mohm 1.2A 210mJ | 5 V | SMD/SMT | SM-8 | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 1.2 A | 400 mOhms | 0.7 V to 1.5 V | Enhancement | IntelliFET | |||||
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3,755
In-stock
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Diodes Incorporated | MOSFET 20V 1.2A | 8 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 100 mOhms | 500 mV | Enhancement | ||||||
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6,877
In-stock
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onsemi | MOSFET 25V 1.2A N-Channel | 8 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 1.2 A | 299 mOhms | Enhancement | |||||||
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5,975
In-stock
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Diodes Incorporated | MOSFET 20V 1.2A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 100 mOhms | Enhancement | |||||||
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43
In-stock
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IXYS | MOSFET 1 Amps 1000V 14 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.2 A | 13 Ohms | Enhancement | |||||||
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2,584
In-stock
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Toshiba | MOSFET Vds=20V Id=1.2A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 390 mOhms | Enhancement | |||||||
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20,000
In-stock
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Nexperia | MOSFET 20V N-Channel Trench MOSFET | 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 270 mOhms | 450 mV | 1.4 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.2 A | 329 mOhms | 800 mV | 6.7 nC | Enhancement | |||||
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2,206
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.2 A | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | ||||
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VIEW | Toshiba | MOSFET Vds=20V Id=1.2A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | Enhancement | |||||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.3A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 320 mOhms | Enhancement |