- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Channel Mode :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,637
In-stock
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Fairchild Semiconductor | MOSFET P-CH/400V/1.56A/6.5OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 1.56 A | 6.5 Ohms | Enhancement | |||||
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1,818
In-stock
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STMicroelectronics | MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 2.1 A | 6.5 Ohms | 19.5 nC | Enhancement | ||||
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32
In-stock
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IXYS | MOSFET 1700V 2A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1700 V | 2 A | 6.5 Ohms | 110 nC | ||||||
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18
In-stock
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IXYS | MOSFET 1.6 Amps 500 V 6 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 6.5 Ohms | 5.5 V | 3.9 nC | Enhancement | |||
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33
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 6.5 Ohms | Depletion |
