- Package / Case :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,527
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | |||||
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3,934
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | |||||
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2,151
In-stock
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Fairchild Semiconductor | MOSFET PT7 30/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 4 mOhms | PowerTrench SyncFET | |||||||
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8,840
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | ||||
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3,681
In-stock
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Texas instruments | MOSFET NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 4 mOhms | 1.5 V | 17.5 nC | NexFET | |||||
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2,950
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Ch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 24 A | 4 mOhms | 72 nC | Enhancement | PowerTrench | |||||
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5,000
In-stock
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Texas instruments | MOSFET N-Channel NexFET Pwr MOSFET | 10 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 4 mOhms | 1.2 V | 6.2 nC | NexFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4 mOhms | 2 V | 63 nC | Enhancement | OptiMOS | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1 V to 2.5 V | 80 nC |