- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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25,410
In-stock
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Fairchild Semiconductor | MOSFET 20V Single P Channel PowerTrench Mosfet | +/- 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 45 mOhms | - 1.5 V | 30 nC | PowerTrench | ||||
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6,965
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.4 A | 45 mOhms | 1.2 V | 18 nC | Enhancement | ||||
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5,475
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.8 A | 45 mOhms | 1.3 V | 37.56 nC | Enhancement | ||||
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8,868
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.9 A | 45 mOhms | Enhancement | ||||||
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5,504
In-stock
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Diodes Incorporated | MOSFET PMOS SINGLE P-CHANNL 30V 7.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.1 A | 45 mOhms | Enhancement | ||||||
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519
In-stock
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STMicroelectronics | MOSFET Low charge STripFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 40 A | 45 mOhms | Enhancement | ||||||
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1,627
In-stock
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Diodes Incorporated | MOSFET 30V P Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 45 mOhms | Enhancement | ||||||
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515
In-stock
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Fairchild Semiconductor | MOSFET 60V 22.7A N-CHANNEL QFET MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22.7 A | 45 mOhms | Enhancement | ||||||
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436
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 31mOhms 34nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 45 mOhms | 34 nC | Enhancement | |||||
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1,544
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 45 mOhms | 1 V | 34 nC | |||||
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2,343
In-stock
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Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 6.9 A | 45 mOhms | - 2.1 V | 6.8 nC | Enhancement | ||||
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527
In-stock
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STMicroelectronics | MOSFET POWER MOSFET Dual N-CH 60V 4A | 15 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5 A | 45 mOhms | 1.7 V | 15 nC | |||||
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279
In-stock
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Diodes Incorporated | MOSFET Dl 30V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 5.5 A | 45 mOhms | Enhancement | ||||||
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5,996
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 45 mOhms | - 2.6 V | 10 nC | Enhancement | ||||
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10
In-stock
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IXYS | MOSFET 47 Amps 600V | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 47 A | 45 mOhms | Enhancement | CoolMOS | |||||
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2,880
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.23 A | 45 mOhms | - 900 mV | 7.6 nC | Enhancement | ||||
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32
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 60A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 45 mOhms | 4.5 V | 255 nC | Enhancement | Linear L2 | |||
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18
In-stock
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IXYS | MOSFET 50 Amps 200V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 45 mOhms | Enhancement | ||||||
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36
In-stock
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Microsemi | MOSFET Power MOSFET | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | |||||
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346
In-stock
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Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 45 mOhms | Enhancement | ||||||
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100
In-stock
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IXYS | MOSFET 28 Amps 65V 0.045 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 28 A | 45 mOhms | |||||||
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VIEW | IR / Infineon | MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 45 mOhms | - 1 V | 59 nC | |||||||
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7,219
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 45 mOhms | |||||||
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312
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 23nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 3.7 A | 45 mOhms | 23 nC | Enhancement |
