- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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10,702
In-stock
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onsemi | MOSFET Single N-CH 60V 40A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 13 mOhms | 1 V to 2 V | 29 nC | |||||
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8,444
In-stock
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Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 13 mOhms | 0.9 V | 17 nC | PowerTrench | ||||
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4,804
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 2 V | 8 nC | PowerTrench | ||||
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3,181
In-stock
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IR / Infineon | MOSFET MOSFT 40V 11A 13mOhm 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 13 mOhms | 2 V | 29 nC | |||||
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2,966
In-stock
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Fairchild Semiconductor | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 13 mOhms | Enhancement | PowerTrench | |||||
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2,688
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 13 mOhms | Enhancement | PowerTrench | |||||
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2,431
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch Dual Cool PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 13 mOhms | 2 V | 77 nC | Enhancement | PowerTrench | |||
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4,847
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | OptiMOS | |||
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4,918
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.3 A | 13 mOhms | - 61 nC | Enhancement | OptiMOS | ||||
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2,877
In-stock
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Fairchild Semiconductor | MOSFET Single P-Channel Power Trench Mosfet | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 13 mOhms | - 0.6 V | PowerTrench | |||||
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2,126
In-stock
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Fairchild Semiconductor | MOSFET P-Channel Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 13 mOhms | - 0.9 V | 53 nC | PowerTrench | |||||
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3,765
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.5 A | 13 mOhms | Enhancement | PowerTrench | |||||
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1,474
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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1,282
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 2.35 V | 8.1 nC | |||||
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261
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | ||||
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6,394
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.9 A | 13 mOhms | 11.6 nC | ||||||
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1,309
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | |||
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2,182
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | 1.35 V to 2.35 V | 8.3 nC | Enhancement | StrongIRFET | |||
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1,116
In-stock
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Nexperia | MOSFET PMPB13XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.3 A | 13 mOhms | 0.65 V | 24 nC | Enhancement | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 2.5 V | 16.5 nC | Enhancement | PowerDI | |||
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147
In-stock
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onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 70 A | 13 mOhms | |||||||
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48,920
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
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877
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
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9,947
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 13 mOhms | Enhancement | OptiMOS | |||||
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4,970
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | ||||
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4,930
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P | 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 22.5 A | 13 mOhms | Enhancement | OptiMOS | |||||
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9,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF | 12 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9 A | 13 mOhms | 0.71 V | 16 nC | Enhancement | ||||
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2,500
In-stock
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onsemi | MOSFET NFET DPAK 30V 40A 13MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 13 mOhms | Enhancement | ||||||
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3,786
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 13 mOhms | 4 V | 19 nC | Enhancement | ||||
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1,617
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement |
