- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,399
In-stock
|
Fairchild Semiconductor | MOSFET TO-252 DPAK P-CH 60V | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.4 A | 185 mOhms | Enhancement | QFET | |||||
|
|
697
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16 A | 185 mOhms | 2 V | 29 nC | Enhancement | ||||
|
|
1,242
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 185mOhms 12nC | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | Enhancement | |||||
|
|
6,000
In-stock
|
onsemi | MOSFET PCH 1.8VDRIVE SERIES | +/- 10 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 185 mOhms | - 1.4 V | 1.7 nC | Enhancement |
