- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,436
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | |||||
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599
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | |||||
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3,445
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 1 Amp | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1 A | 800 mOhms | Enhancement | |||||||
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2,175
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.3 A | 800 mOhms | Enhancement | |||||||
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3,094
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel A-FET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1.13 A | 800 mOhms | Enhancement | |||||||
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1,637
In-stock
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Fairchild Semiconductor | MOSFET 200V N Chanel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.5 A | 800 mOhms | Enhancement | |||||||
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839
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 800 mOhms | Enhancement | |||||||
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3,950
In-stock
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Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 20 mA | 800 mOhms | - 1 V | 0.84 nC | Enhancement | |||||
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75
In-stock
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IXYS | MOSFET 8 Amps 500V 0.8 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | Enhancement | |||||||
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1,470
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 7.5 A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 800 mOhms | Enhancement | |||||||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 5.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.6 A | 800 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS |