- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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110
In-stock
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Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | ThinPAK-5 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 19.2 A | 189 mOhms | 3.5 V | 37 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET LOW POWER PRICE/PERFORM | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 19.2 A | 189 mOhms | 3.5 V | 37 nC | Enhancement | CoolMOS | |||
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15
In-stock
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Toshiba | MOSFET Vds=-20V Id=-1.7A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 189 mOhms | Enhancement |
