- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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17,058
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.8 A | 170 mOhms | Enhancement | PowerTrench | |||||
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10,645
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 170 mOhms | Enhancement | ||||||
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26,110
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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10,679
In-stock
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IR / Infineon | MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl | 12 V | SMD/SMT | Micro-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 170 mOhms | 0.7 V | 4.7 nC | |||||
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2,772
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | |||||
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1,531
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | ||||||
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142
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 2.5A 170mOhm 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 5.5 V | 26 nC | Enhancement | ||||
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114
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | ||||
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5,455
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.9 A | 170 mOhms | Enhancement | PowerTrench | |||||
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55
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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3,074
In-stock
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Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 170 mOhms | Enhancement | ||||||
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51
In-stock
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IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-CH MOSFET 20V | 8 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.35 A | 170 mOhms | 350 mV | 3.1 nC | Enhancement | ||||
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44
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
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1,348
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||||
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376
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||||
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25,700
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH 60V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.2 A | 170 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm | 20 V | SMD/SMT | PW-Mold-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5 A | 170 mOhms | Enhancement |
