- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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11,185
In-stock
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onsemi | MOSFET NFET SOT23 30V 4A TR | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement | |||||
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7,505
In-stock
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onsemi | MOSFET -20V -4.4A P-Channel w/4.1A Schottky | 8 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 64 mOhms | Enhancement | |||||
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1,992
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 20Vgs 587pF 12.2nC | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.4 A | 64 mOhms | - 3 V | 12.2 nC | Enhancement | |||
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2,495
In-stock
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Diodes Incorporated | MOSFET 1.4W 30V 5.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.5 A | 64 mOhms | Enhancement | |||||
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2,365
In-stock
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Diodes Incorporated | MOSFET 30V 4A N-CHANNEL | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement | |||||
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1,232
In-stock
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Toshiba | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | 20 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | 1.3 V to 2.5 V | 2.5 nC |
