- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,954
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 11 Amp Power MDmesh | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 360 mOhms | Enhancement | ||||||
|
|
4,634
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.3 A | 360 mOhms | 4 V | 22 nC | CoolMOS | ||||
|
|
3,532
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/200V/10A/QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7.8 A | 360 mOhms | Enhancement | ||||||
|
|
1,280
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15.1 A | 360 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
VIEW | STMicroelectronics | MOSFET POWER MOSFET N-CH | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 360 mOhms | 3 V | 27 nC | |||||
|
|
VIEW | Toshiba | MOSFET Vds=-30V Id=-1.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 360 mOhms | Enhancement | ||||||
|
|
155
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 360 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS |
