- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,500
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
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63,108
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 450 mA | 1.9 Ohms | +/- 1 V | 0.4 nC, 0.5 nC | Enhancement | ||||
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1,111
In-stock
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Fairchild Semiconductor | MOSFET 2.5A Output Current GateDrive Optocopler | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.7 A | 1.9 Ohms | 5 V | 8.3 nC | Enhancement | UniFET | |||
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96
In-stock
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IXYS | MOSFET 7 Amps 1000V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | 6 V | 47 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET 6 Amps 1000V 2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6 A | 1.9 Ohms | Enhancement | HyperFET |
