- Manufacture :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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406
In-stock
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Diodes Incorporated | MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 12 mOhms | 1 V to 3 V | 17 nC | Enhancement | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.6 mOhms | 1 V to 3 V | 80 nC | ||||
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1,379
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 1 V to 3 V | 10 nC | Enhancement |
