- Package / Case :
- Rds On - Drain-Source Resistance :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,698
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 330 mOhms | 3 V to 5 V | 17.8 nC | SupreMOS | |||||
|
5,028
In-stock
|
Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | |||||
|
1,040
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 620mohm / 600V, FRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 620 mOhms | 3 V to 5 V | 20 nC | SuperFET II FRFET | |||||
|
354
In-stock
|
Fairchild Semiconductor | MOSFET UniFET1 300V N-Channel MOSFET, D2PAK | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 38 A | 103 mOhms | 3 V to 5 V | 56 nC | Enhancement | UniFET FRFET | ||||
|
1,649
In-stock
|
Infineon Technologies | MOSFET 500V 3.5A 2.2Ohm MotIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.05 Ohms | 3 V to 5 V | 34 nC | Enhancement | |||||
|
40
In-stock
|
IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 540 mOhms | 3 V to 5 V | 25 nC | Enhancement | HyperFET | ||||
|
857
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 43mOhms 25nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 43 mOhms | 3 V to 5 V | 25 nC | Enhancement |