- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.3 mOhms (1)
- 1.6 mOhms (1)
- 1.85 mOhms (1)
- 10.3 mOhms (1)
- 10.5 mOhms (1)
- 10.7 mOhms (1)
- 11.2 mOhms (1)
- 12.3 mOhms (2)
- 14.2 mOhms (1)
- 14.5 mOhms (1)
- 16.3 mOhms (1)
- 17 mOhms (1)
- 17.1 mOhms, 11.5 mOhms (1)
- 170 mOhms (2)
- 19.9 mOhms (1)
- 2.4 mOhms (1)
- 20 mOhms (2)
- 23 mOhms (1)
- 3.04 mOhms (1)
- 3.1 mOhms (1)
- 3.3 mOhms (1)
- 35 mOhms (1)
- 385 mOhms (2)
- 4.3 mOhms (2)
- 4.6 mOhms (1)
- 4.8 mOhms (1)
- 5.7 mOhms (2)
- 5.8 mOhms (1)
- 6.2 mOhms (1)
- 6.3 mOhms (1)
- 6.7 mOhms (1)
- 6.8 mOhms (2)
- 7.2 mOhms (1)
- 7.7 mOhms (1)
- 8.4 mOhms (1)
- 83.5 mOhms (1)
- 9.8 mOhms (1)
- 90 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (2)
- 111 nC (1)
- 12 nC (1)
- 13 nC (1)
- 15 nC (2)
- 150 nC (1)
- 16 nC (1)
- 17.3 nC (2)
- 18 nC (1)
- 18.6 nC (1)
- 20 nC (1)
- 25 nC (1)
- 26 nC (1)
- 26.6 nC (2)
- 30 nC (1)
- 31 nC (2)
- 32 nC (1)
- 35 nC (1)
- 36 nC (1)
- 4.3 nC (1)
- 41 nC (1)
- 42 nC (1)
- 44 nC (2)
- 46 nC (1)
- 5.4 nC (1)
- 52 nC (1)
- 6.2 nC (1)
- 6.5 nC (1)
- 6.7 nC (2)
- 6.7 nC, 14 nC (1)
- 7 nC (1)
- 7.3 nC (1)
- 7.6 nC (1)
- 7.7 nC (1)
- 77 nC (1)
- 9.5 nC (3)
45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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4,900
In-stock
|
Fairchild Semiconductor | MOSFET PT8 40/20V N-ch Dual Symmetric | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 23 mOhms | 1.8 V | 7.6 nC | PowerTrench | ||||
|
|
4,031
In-stock
|
Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 35 mOhms | 1.8 V | 12 nC | PowerTrench | |||||
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29,320
In-stock
|
Fairchild Semiconductor | MOSFET NChan 40V 76A 69W PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 76 A | 3.1 mOhms | 1.8 V | 46 nC | PowerTrench | |||||
|
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12,777
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10.5 mOhms | 1.8 V | 9.5 nC | |||||
|
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4,458
In-stock
|
IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 11 A | 16.3 mOhms | 1.8 V | 15 nC | |||||
|
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3,416
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | ||||
|
|
1,952
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 24 A | 3.04 mOhms | 1.8 V | 44 nC | |||||
|
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3,014
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 9.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 9.1 A, 11 A | 17.1 mOhms, 11.5 mOhms | 1.8 V | 6.7 nC, 14 nC | |||||
|
|
2,667
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.8 mOhms | 1.8 V | 31 nC | Enhancement | ||||
|
|
41,120
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 4.6 mOhms | 1.8 V | 41 nC | |||||
|
|
24,232
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 14.2 mOhms | 1.8 V | 6.2 nC | |||||
|
|
5,598
In-stock
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | |||||
|
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4,000
In-stock
|
Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.2 mOhms | 1.8 V | 15 nC | SmallPowIR | ||||
|
|
2,962
In-stock
|
Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 7.7 mOhms | 1.8 V | 20 nC | SmallPowIR | ||||
|
|
3,988
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.2 A | 19.9 mOhms | 1.8 V | 10 nC | |||||
|
|
3,377
In-stock
|
IR / Infineon | MOSFET 25V 12nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 19 A | 6.7 mOhms | 1.8 V | 18 nC | SmallPowIR | ||||
|
|
943
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.85 mOhms | 1.8 V | 77 nC | |||||
|
|
3,092
In-stock
|
onsemi | MOSFET NFET SO8FL 30V TR | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58.5 A | 8.4 mOhms | 1.8 V | 25 nC | Enhancement | ||||
|
|
8,900
In-stock
|
IR / Infineon | MOSFET 30V SINGLE N-CH 4.1mOhms 14nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 6.3 mOhms | 1.8 V | 31 nC | |||||
|
|
18,400
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
|
|
1,635
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 6 A | 20 mOhms | 1.8 V | 18.6 nC | Enhancement | ||||
|
|
1,385
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 7.2 mOhms | 1.8 V | 32 nC | |||||
|
|
2,611
In-stock
|
Infineon Technologies | MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1.8 V | 10 nC | SmallPowIR | ||||
|
|
2,503
In-stock
|
IR / Infineon | MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 1.8 V | 5.4 nC | SmallPowIR | ||||
|
|
1,000
In-stock
|
Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 65mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 35 A | 90 mOhms | 1.8 V | 30 nC | Enhancement | ||||
|
|
1,348
In-stock
|
Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||||
|
|
GET PRICE |
12,419
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.8 mOhms | 1.8 V | 36 nC | NexFET | |||
|
|
376
In-stock
|
Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 120 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 22 A | 170 mOhms | 1.8 V | 17.3 nC | Enhancement | ||||
|
|
10,635
In-stock
|
Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 9.8 mOhms | 1.8 V | 16 nC | NexFET | ||||
|
|
1,343
In-stock
|
Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement |
