- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,078
In-stock
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Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q1/T1 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement | ||||
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4,399
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE S | 8 V | SMD/SMT | CSP-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 27 A | 6.3 mOhms | 500 mV | 100 nC | Enhancement | |||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmes... | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 42 A | 63 mOhms | 3 V | 100 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET | ||||
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2,966
In-stock
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Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q3/T4 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement |
