- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,015
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | Enhancement | |||||
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2,232
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 3.7 mOhms | 1.6 V | 13.3 nC | Enhancement | NexFET | |||
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1,795
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 3.3 mOhms | 1.6 V | 13.3 nC | Enhancement | NexFET | |||
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3,273
In-stock
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Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 3.3 mOhms | 1.6 V | 13.3 nC | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4.3 A | 50 mOhms | 13.3 nC | Enhancement |
