- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,435
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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2,012
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
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3,068
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP | SMD/SMT | ThinPAK-5 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16.4 A | 199 mOhms | 3.5 V | 32 nC | CoolMOS | |||||
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3,740
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | ||||
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3,685
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 95A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 95 A | 7.6 mOhms | 2.2 V | 32 nC | Enhancement | ||||
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3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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3,606
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 40mOhms 32nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 3.8 A | 40 mOhms | 2 V | 32 nC | Enhancement | ||||
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468
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
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595
In-stock
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IXYS | MOSFET 600V 10A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5.5 V | 32 nC | Enhancement | ||||
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688
In-stock
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Fairchild Semiconductor | MOSFET 120V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 65 A | 9.6 mOhms | 4 V | 32 nC | PowerTrench | ||||
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970
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 40 FET 40V, 5A, 65mOhm | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 55 V | 3.8 A | 40 mOhms | 2 V | 32 nC | Enhancement | |||||
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1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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1,385
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 5mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 82 A | 7.2 mOhms | 1.8 V | 32 nC | |||||
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55
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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250
In-stock
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Texas instruments | MOSFET 40V CSD18503Q5A 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.4 mOhms | 1.5 V | 32 nC | Enhancement | ||||
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14,860
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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14,975
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 40A TDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 3.4 mOhms | 2.1 V | 32 nC | Enhancement | ||||
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4,990
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 40A TDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 3.4 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | |||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | |||
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6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V PowerPAK SC-70 | +/- 20 V | SMD/SMT | PowerPAK-SC70-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 0.021 Ohms | - 3 V | 32 nC | Enhancement | ||||
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1,403
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 380 mOhms | 3 V | 32 nC |
