- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,791
In-stock
|
Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 5.7 mOhms | 2 V | 15 nC | NexFET | |||||
|
48,990
In-stock
|
Texas instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | ||||
|
1,978
In-stock
|
Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | BGA-10 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 14 A | 9.3 mOhms | 1.3 V | 15 nC | NexFET | |||||
|
796
In-stock
|
Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.7 mOhms | 2 V | 15 nC | Enhancement | NexFET |