- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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8,494
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 6 M Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | |||||
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3,465
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 16.5 mOhms | 1 V | 10.8 nC | Enhancement | ||||
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4,727
In-stock
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onsemi | MOSFET NFET SO8FL 30V 48A 6MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 5.6 mOhms | 10.8 nC | Enhancement | |||||
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2,982
In-stock
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Nexperia | MOSFET PMPB20EN/SOT1220/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 16.5 mOhms | 1 V | 10.8 nC | Enhancement | ||||
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3,498
In-stock
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Texas instruments | MOSFET 20V Pch MOSFET | +/- 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 104 A | 150 mOhms | - 650 mV | 10.8 nC | Enhancement | ||||
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555
In-stock
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Texas instruments | MOSFET -20V, P-channel NexFET Pwr MOSFET | 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 10.1 mOhms | - 0.9 V | 10.8 nC | Enhancement | NexFET | |||
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VIEW | Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 118 mOhms | 350 mV | 10.8 nC | Enhancement | ||||
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15,000
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 6 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC |
