- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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30,227
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 1 Ohms | - 1 V | 0.5 nC | Enhancement | ||||
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28,958
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K | 12 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 750 mA | 550 mOhms | 0.9 V | 0.5 nC | Enhancement | ||||
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10,484
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT963,10K | 8 V | SMD/SMT | SOT-963-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 450 mA | 990 mOhms | 0.5 nC | Enhancement | |||||
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11,109
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 510 mA | 990 mOhms | 1 V | 0.5 nC | Enhancement | ||||
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6,479
In-stock
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Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2.8 Ohms | 0.5 nC | ||||||
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69
In-stock
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Diodes Incorporated | MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon | 8 V, 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 1.15 A | 5 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | ||||
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965
In-stock
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Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W | 4.5 V, - 4.5 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 500 mOhms, 1 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | ||||
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8,000
In-stock
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Nexperia | MOSFET Dual N-Channel 60V 340mA | 20 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 340 mA | 1.6 Ohms | 0.5 nC | ||||||
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VIEW | Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W | 4.5 V, - 4.5 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 500 mOhms, 1 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement |