- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,465
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 9.3 A, 9.3 A | 12.5 mOhms, 12.5 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
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1,430
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 9.3 A, 9.3 A | 12.5 mOhms, 12.5 mOhms | 1 V, 1 V | 17 nC, 17 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | OptiMOS |
