- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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7,976
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | + /- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 31 mOhms | - 0.55 V | 15.8 nC | Enhancement | |||
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30,000
In-stock
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onsemi | MOSFET PFET UDFN 12V 7A 24MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 7 A | 24 mOhms | - 1 V | 15.8 nC | Enhancement | |||
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24,000
In-stock
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onsemi | MOSFET PFET UDFN 12V 7A 24MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 7 A | 24 mOhms | - 1 V | 15.8 nC | Enhancement |
