- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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12,010
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 650 mA | 760 mOhms | 0.95 V | 0.7 nC | Enhancement | |||
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5,298
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 900 mOhms | - 400 mV | 0.7 nC | Enhancement |
